99.95 I-Molybdenum Pure Molybdenum Product Moly Sheet I-Moly Plate I-Moly Foil Emazifeni Amazinga Okushisa Aphezulu Nezisetshenziswa Ezihlobene
Amapharamitha womkhiqizo
Into | ishidi/ipuleti le-molybdenum |
Ibanga | Mo1, Mo2 |
Usayizi wesitoko | 0.2mm, 0.5mm, 1mm, 2mm |
I-MOQ | ukuginqika okushisayo, ukuhlanza, ukupholishwa |
Isitoko | 1 kilogram |
Impahla | anti-corrosion, ukumelana nokushisa okuphezulu |
Ukwelashwa Okungaphezulu | Indawo yokuhlanza i-alkaline egoqwe ngokushisayo |
I-electrolytic polish surface | |
Indawo ebandayo egoqekile | |
Indawo eyenziwe ngomshini | |
Ubuchwepheshe | i-extrusion, i-forging kanye ne-rolling |
Ukuhlolwa Nekhwalithi | ukuhlolwa kobukhulu |
ukuhlolwa kwekhwalithi yokubukeka | |
ukuhlolwa kokusebenza kwenqubo | |
ukuhlolwa kwezakhiwo zemishini | |
Imininingwane izoshintshwa ngokwezidingo zamakhasimende. |
Ukucaciswa
Ububanzi, mm | Ubukhulu, mm | Ukuchezuka kobukhulu, min, mm | Ukucaba, % | |||
<300mm | > 0.13mm | ±0.025mm | 4% | |||
≥300mm | > 0.25mm | ±0.06mm | 5%-8% | |||
Ubumsulwa(%) | Ag | Ni | P | Cu | Pb | N |
<0.0001 | <0.0005 | <0.001 | <0.0001 | <0.0001 | <0.002 | |
Si | Mg | Ca | Sn | Ba | Cd | |
<0.001 | <0.0001 | <0.001 | <0.0001 | <0.0003 | <0.001 | |
Na | C | Fe | O | H | Mo | |
<0.0024 | <0.0033 | <0.0016 | <0.0062 | <0.0006 | >99.97 |
Ukucaciswa
Imininingwane ye-molybdenum wire: | ||
Izinhlobo ze-Molybdenum Wire | Ububanzi (intshi) | Ukubekezelela (%) |
I-Molybdenum Wire ye-EDM | 0.0024" ~ 0.01" | ±3% wt |
I-Molybdenum Spray Wire | 1/16" ~ 1/8" | ±1% ukuya ku-3% wt |
I-Molybdenum Wire | 0.002" ~ 0.08" | ±3% wt |
I-Molybdenum Wire(ihlanzekile) | 0.006" ~ 0.04" | ±3% wt |
Ibanga Lemininingwane
1) Ubukhulu:Ipuleti eligoqiwe elishisayo: 1.5 ~ 40mm;Ipuleti/ishidi eligoqeke ngokubanda:0.05~3.0mm
2) Ububanzi:Ipuleti eligoqelwe ngokushisayo:≤750mm;Ipuleti/ishidi eligoqwe elibandayo: ≤1050mm;
3) Ubude:Ipuleti eligoqelwe ngokushisayo:≤3500mm;Ipuleti/ishidi eligoqeke ngokubanda: ≤2500mm
Isicelo
Ukwahlukanisa | Isici | Inkambu yohlelo lokusebenza |
Ipuleti le-Mo elihlanzekile | Iphoyinti lokuncibilika eliphezulu, ukuhlanzeka okuphezulu, ukunwebeka okuphansi kwe-thermal, ukuqhutshwa kwe-thermal okuhle kakhulu, ukusebenza kwe-welding kanye nokusebenza kahle | Isetshenziselwa kakhulu ukukhiqiza okuhlosiwe kwe-electron (ion) ye-beam sputtering target, izingxenye ezisele zomshini wokufakelwa kwe-ion, usinki wokushisa we-semiconductor, izingxenye zeshubhu le-electron, okokusebenza kwe-MOCVD, kanye nedivayisi yezokwelapha, indawo eshisayo, izinto ezihlikihlayo nezisekelayo zesithando somlilo sekristalu sesafire, iheater, isivikelo sokushisa, into esekelayo, kanye nesikebhe sevacuum nesithando somlilo esivikelwe nge-hydrogen |
Ipuleti le-Pure Mo liphathwa ngokushisa okuphezulu | Ukuhlanzeka okuphezulu, okungaguquguquki esakhiweni esingokomzimba namakhemikhali, kanye nekhono elihle kakhulu lokushisa eliphezulu lokulwa nokukhubazeka | Ifanele ukukhiqiza ipuleti lesisekelo lezitsha zobumba zikagesi nezisetshenziswa zangemuva |
I-Lanthanum-doped Mo plate | Ngokusebenzisa indlela yokuqinisa ukuhlakazeka kwe-oxide, ukuguqulwa okuthile kwepulasitiki kungenziwa ngaphansi kwezinga lokushisa kwegumbi ngemva kokwelashwa ekushiseni okuphezulu ngenxa yamandla alo aphezulu, izinga lokushisa eliphezulu le-recrystallization kanye namandla aphakeme kakhulu okushisa kanye nokuthuthukiswa kokuqina kwecrystallization kanye nekhono lokushisa eliphezulu lokulwa nokukhubazeka. | ilungele ikakhulukazi ukwenza izinto ezisetshenziswa endaweni yokusebenza engaphezu kuka-1500 ℃, njenge-heater, isivikelo sokushisa, i-base plate kanye nesikebhe seziko lokushisa eliphezulu. |
I-Lanthanum-doped Mo plate iphathwe ngezinga lokushisa eliphezulu | Amandla aphezulu okushisa aphezulu, kanye nokuguqulwa kwezinga lokushisa eliphansi ngenxa yomphumela wawo wokuqinisa ukuhlakazeka kwe-oxide kanye nesakhiwo esithile. | ilungele ukwenza i-base plate yokufaka izitsha zobumba ezicolekileyo kanye ne-ceramic yangemuva, i-bearing rack, i-base plate nejazi lokushisa lokushisa eliphezulu |
Ipuleti le-Doped Mo | Amandla okushisa aphezulu, izinga lokushisa eliphansi le-recrystallization, kanye nokusebenza okuhle kakhulu kwe-high-temperature ukumelana nokukhuphuka ngenxa yendlela yayo yokuqinisa ibhamuza le-potassium | ifaneleka ngokukhethekile ukwenza imikhiqizo enezinga lokushisa eliphansi eliphansi, njengezingxenye zeshubhu le-electron, i-heater, isivikelo sokushisa, nokunye kwesithando somlilo esishisayo. |
Ipuleti le-Doped Mo liphathwa ngokushisa okuphezulu | Izinga lokushisa eliphansi eliphansi ngenxa yokuntenga kwayo okude okusanhlamvu kanye nokuhlanzeka okuphezulu | ilungele ukwenza imikhiqizo enesidingo esikhulu sokuhlanzeka kanye nokukhuphuka kwezinga lokushisa eliphezulu, njengepuleti lesisekelo le-electronic ceramics sintering noma ukushisa ukushisa, izakhi ezisekelayo kumashubhu e-electron, njalonjalo. |
Ipuleti le-Mo eligoqiwe elihlanzekile | I-anisotropy ephansi nokusebenza okuhle kokugoba | kulungele ikakhulukazi ukwelula, ukuphotha, ukuqinisa nokugoba, nokwenza ukwelula noma ukuphotha i-Mo crucible, izingxenye ze-Mo zidinga ukuqinisa noma ukugoba, njengeshidi likathayela, ucezu olugobayo, isikebhe se-Mo, njalonjalo. |
Ipuleti le-Mo eligoqekile eligoqiwe liphathwa ngezinga lokushisa eliphezulu | I-anisotropy ephansi nokusebenza okuhle kokugoba ngaphandle kokusebenza okufanayo kwe-Lanthanum-doped Mo plate | ifaneleka ikakhulukazi ukuqinisa nokugoba, nokwenza izingxenye ze-Mo eziqinisiwe noma ezigobile ezinesidingo sokushisa okuphezulu, njengendawo yokushisa, izingxenye ezakhiwe ezigobile, isikebhe seMo esisezingeni eliphezulu, nokunye. |
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